Structure-sensitive oxidation of the indium phosphide „001... surface
نویسندگان
چکیده
The oxidation of anionand cation-rich indium phosphide ~001! has been investigated by exposure to unexcited molecular oxygen. Indium phosphide oxidation is an activated process and strongly structure sensitive. The In-rich d(234) surface reacts with oxygen at 300 K and above. Core level x-ray photoemission spectra have revealed that the O2 dissociatively chemisorbs onto the d(234), inserting into the In–In dimer and In–P back bonds. By contrast, the P-rich (231) reconstruction does not absorb oxygen up to 5310 Langmuir at 300 K, as judged by the unperturbed reflectance difference spectrum and low energy electron diffraction pattern. Above 455 K, oxygen reacts with the (231) inserting preferentially into the In–P back bonds and to a lesser extent into the phosphorus dimer bonds. © 2002 American Institute of Physics. @DOI: 10.1063/1.1471577#
منابع مشابه
Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds.
The indium phosphide (001) surface provides a unique chemical environment for studying the reactivity of hydrogen toward the electron-deficient group IIIA element, indium. Hydrogen adsorption on the In-rich delta(2 x 4) reconstruction produced a neutral, covalently bound bridging indium hydride. Using vibrational spectroscopy and ab initio cluster calculations, two types of bridging hydrides we...
متن کاملArsenic adsorption and exchange with phosphorus on indium phosphide „001..
Arsenic adsorption and exchange with phosphorus on indium phosphide ~001! have been studied by scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron spectroscopy. The surface phase diagram as a function of temperature has been obtained. At 285 °C, arsenic adsorbs on the InP s(234) surface (P coverage50.25 ML), forming a disordered (134) with double layers of ar...
متن کاملStructure of arsenic-treated indium phosphide „001... surfaces during metalorganic vapor-phase epitaxy
We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP ~001! film to 10 mTorr of tertiarybutylarsine below 500 °C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick ~2.3–7.5 Å!. The surface of this epilayer remains atomically smooth independent of arsenic e...
متن کاملKinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (001)
The kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (001) have been determined using reflectance difference spectroscopy for real-time monitoring of the phosphorus coverage. The precursor adsorption rate depends linearly on the coverage, and the initial sticking coefficient varies from 0.007 to 0.001 as the temperature increases from 420 to 520 C. T...
متن کاملLarge-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition
We employ a simple two-step growth technique to grow large-area 1550-nm laser structures by direct hetero-epitaxy of III–V compounds on patterned exact-oriented (001) silicon (Si) substrates by metal organic chemical vapor deposition. Densely-packed, highly uniform, flat and millimeter-long indium phosphide (InP) nanowires were grown from Si v-grooves separated by silicon dioxide (SiO2) stripes...
متن کامل